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JP. Raskin

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Jean-Pierre Raskin, Professor

Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL) 
Electrical Engineering Dpt. (ELEN)
Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM) 
Louvain School of Engineering (EPL)
Université catholique de Louvain (UCL)
Louvain-la-Neuve, Belgium

 

Office Address

B.313. Maxwell Building, Place du Levant 3
B-1348, Louvain-la-Neuve
Belgium

 

Contact Information

 

Tel(Fax): +32(0)10 47 39 96 (25 98)
Jean-Pierre Raskin160;
Web : http://www.uclouvain.be/jean-pierre.raskin

 Postal adress : ELEN - Place du Levant 3 bte L5.03.02 à 1348 Louvain-la-Neuve

Research Topic(s)

Jean-Pierre RASKIN (IEEE M'97, IEEE SM’06) was born in Aye, Belgium, in 1971. He received the Industrial Engineer degree from the Institut Supérieur Industriel d'Arlon, Belgium, in 1993, and the M.S. and Ph.D. degrees in Applied Sciences from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 1994 and 1997, respectively. From 1994 to 1997, he was a Research Engineer at the Microwave Laboratory, UCL, Belgium. He worked on the modeling, characterization and fabrication of MMIC's in Silicon-on-Insulator (SOI) technology for low-power, low-voltage applications. In 1998, he joined the EECS Department of The University of Michigan, Ann Arbor, USA. He has been involved in the development and characterization of micromachining fabrication techniques for microwave and millimeter-wave circuits and microelectromechanical transducers/amplifiers working in harsh environments. In 2000, he joined the Microwave Laboratory of UCL, Louvain-la-Neuve, Belgium, as Associate Professor. Since 2007, he has been a Full Professor and Head of the Microwave Laboratory of UCL. From September 2009 to September 2010, he was visiting professor at Newcastle University, Newcastle Upon Tyne, UK. His research interests are the modeling, wideband characterization and fabrication of advanced SOI MOSFETs as well as micro and nanofabrication of MEMS / NEMS sensors and actuators, including the extraction of intrinsic material properties at nanometer scale.

He is an IEEE Senior Member, EuMA Associate Member and Member of the Research Center in Micro and Nanoscopic Materials and Electronic Devices of the Université catholique de Louvain. He is author or co-author of more than 350 scientific articles.

 

Latest relevant publications

  •  F. Iker, N. Andre, T. Pardoen and J.-P. Raskin, “Three-dimensional self-assembled sensors in thin film SOI technology”, IEEE Journal of MicroElectroMechanical Systems, vol. 15, no. 6, pp. 1687-1697, December 2006.
  • D. Fabregue, N. andre, M. Coulombier, J.P. Raskin, and T. Pardoen, Multipurpose nanomechanical laboratory : five thousands micromachines on a wafer, Micro and NanoLetters, 2, pp. 13-16, 2007.
  • N. André, M. Coulombier, V. De Longueville, D. Fabrègue, T. Gets, S. Gravier, T. Pardoen, J.-P. Raskin, “Multipurpose nanomechanical laboratory revealing the size-dependent strength and ductility of submicron metallic films”, Microelectronic Engineering, vol. 84, pp. 2714-2718, 2007.
  • J.-P. Raskin, F. Iker, N. André, B. Olbrecht, T. Pardoen and D. Flandre, “Bulk and surface micromachined MEMS in thin film SOI technology”, (invited paper), Elsevier Science, Electrochimica Acta, vol. 52, issue 8, pp. 2850-2861, February 2007.
  • J.-P. Raskin, “Wideband characterization of SOI materials and devices”, (invited paper), Elsevier Science, Solid-State Electronics, vol. 51, pp. 1161-1171, 2007.
  • J.-P. Raskin, G. Pailloncy, D. Lederer, F. Danneville, G. Dambrine, S. Decoutere, A. Mercha, B. Parvais, “High Frequency Noise Performance of 60 nm gate length FinFETs”, IEEE Transaction on Electron Devices, vol. 55, no. 10, pp. 2718-2727, October 2008.
  • A. Boé, A. Safi, M. Coulombier, T. Pardoen and J.-P. Raskin, “Internal stress relaxation based method for elastic stiffness characterization of very thin films”, Thin Solid Films, 518, pp. 260–264, 2009.
  • S. Gravier, M. Coulombier, A. Safi, N. André, J.-P. Raskin and T. Pardoen, “New on-chip nanomechanical testing laboratory - Applications to aluminum and polysilicon thin films”, IEEE Journal of MicroElectroMechanical Systems, vol. 18, no. 3, pp. 555-569, March 2009.
  • A. Boé, A. Safi, M. Coulombier, T. Pardoen and J.-P. Raskin, “MEMS microstructures for the nanomechanical characterization of thin films”, (invited paper), Smart Materials and Structures, vol. 18, pp. 115018, 2009.
  • M. Coulombier, A. Boe, C. Brugger, J.-P. Raskin and T. Pardoen, “Imperfection sensitive ductility of aluminium thin films”, Scripta Materialia, vol. 62, pp. 742–745, 2010.
  • J.-P. Raskin, J.-P. Colinge, I. Ferain, A. Kranti, C.-W. Lee, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, “Mobility improvement in nanowire junctionless transistors by uniaxial strain”, Applied Physics Letters 97, 042114, 2010.
  • H. Idrissi, B. Wang, M.-S. Colla, J.-P. Raskin, D. Schryvers and T. Pardoen, “High Strain Hardening in Twinned Nanocrystalline Palladium Films”, Advanced Materials, 23:18, pp. 2119-2122, 2011.
  • V. Passi, F. Ravaux, E. Dubois, S. Clavaguera, C. Celle, J.-P. Simonato, L. Silvestri, S. Reggiani, D. Vuillaume, J.-P. Raskin, “High gain and fast detection of warfare agent using back-gated silicon nanowires MOSFETs”, IEEE Electron Device Letters, vol. 32, no. 7, pp. 976-978, July 2011.
  • S. Makovejev, S. Olsen and J.-P. Raskin, “RF extraction of self-heating effects in FinFETs of Various geometries”, IEEE Transactions on Electron Devices, 2011.